硅
材料科学
硼硅酸盐玻璃
碳化硅
光电子学
碳化物
金属
混合硅激光器
热的
窗口(计算)
碱金属
纳米技术
宽禁带半导体
阳极连接
蚀刻(微加工)
工程物理
原子层沉积
冶金
制作
作者
Z. -P. Xie,C. -P. Hao,D. Sheng
标识
DOI:10.48550/arxiv.2512.20690
摘要
Atomic cells made by anodically bonding silicon and borosilicate glasses are widely used in atomic devices. One inherent problem in these cells is that the silicon material blocks beams with wavelengths shorter than 1000 nm, which limits available optical accesses when alkali metal atoms are involved. In this work, we investigate the possibility of the silicon carbide material as an alternative of silicon materials in fabricating anodically bonded cells. We demonstrate that the optical, thermal and mechanical properties of silicon carbide help to improve the performance of atomic devices in certain applications.
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