B-doped In2O3Transparent Electrode for Si-based Schottky Barrier Solar Cell Application

The small ion radius and Lewis acid strength of B implies its role in creating highly conductive and transparent In- ₂ Dx ₃ -based transparent electrode by optimizing its concentration. We developed a B-doped In ₂ 0 ₃ transparent conducting electrode for Si-based Schottky barrier solar cells. Under the optimized concentration, the resistivity and average transparency of the B-doped In ₂ 0 ₃ film in the wavelength of 380-750 nm were 9.4 x 10 ^-5 Ωcm and 82.3%, respectively. Even under as-deposited conditions, these values are comparable for those of ITO film deposited by the same sputtering system (8.1 x 10 ^-5 Ωcm and 80.5%). We also demonstrated a Schottky barrier solar cell using B-doped In ₂ 0 ₃ as the top transparent electrode and compared its performance to a solar cell device with ITO electrode. The estimated work functions for B-doped In ₂ 0 ₃ and ITO were 4.72 and 4.75 eV, respectively. Based on its low carrier density, the conversion efficiency of B-doped In ₂ 0 ₃ is still expected to improve.