化学
杰纳斯
范德瓦尔斯力
偶极子
凝聚态物理
密度泛函理论
极地的
联轴节(管道)
单层
拉曼光谱
异质结
过渡金属
硫族元素
化学物理
分子物理学
纳米技术
光学
结晶学
计算化学
分子
有机化学
量子力学
催化作用
物理
生物化学
冶金
材料科学
作者
Kunyan Zhang,Yunfan Guo,Qingqing Ji,Ang‐Yu Lu,Cong Su,Hua Wang,Alexander A. Puretzky,David B. Geohegan,Xiaofeng Qian,Shiang Fang,Efthimios Kaxiras,Jing Kong,Shengxi Huang
摘要
Interlayer coupling plays essential roles in the quantum transport, polaritonic, and electrochemical properties of stacked van der Waals (vdW) materials. In this work, we report the unconventional interlayer coupling in vdW heterostructures (HSs) by utilizing an emerging 2D material, Janus transition metal dichalcogenides (TMDs). In contrast to conventional TMDs, monolayer Janus TMDs have two different chalcogen layers sandwiching the transition metal and thus exhibit broken mirror symmetry and an intrinsic vertical dipole moment. Such a broken symmetry is found to strongly enhance the vdW interlayer coupling by as much as 13.2% when forming MoSSe/MoS2 HS as compared to the pristine MoS2 counterparts. Our noncontact ultralow-frequency Raman probe, linear chain model, and density functional theory calculations confirm the enhancement and reveal the origins as charge redistribution in Janus MoSSe and reduced interlayer distance. Our results uncover the potential of tuning interlayer coupling strength through Janus heterostacking.
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