Manipulated magnetic behaviors of c-oriented ε-Fe2∼3N films on GaN

We synthesized c-oriented e-Fe2~3N films on c-GaN by magnetron sputtering. The saturation magnetization and Curie temperature of e-Fe2~3N films are decreased due to the reducing of Fe-Fe ferromagnetic exchange coupling with increasing N participation. The state transitions of magnetization at low temperature are observed. The presented results on manipulable magnetic properties by Fe:N ratio show that e-Fe2~3N/GaN structure provides an advanced platform both for studying basic properties of e-Fe2~3N and for the design of spintronics devices.