异质结
外延
材料科学
氢
纳米技术
GSM演进的增强数据速率
光电子学
化学
计算机科学
图层(电子)
电信
有机化学
作者
Yanbo Ma,Lei Yang,Ye Li,Hai Li,Yanping Huang,Junze Chen
出处
期刊:Small
[Wiley]
日期:2023-12-11
卷期号:20 (20)
被引量:6
标识
DOI:10.1002/smll.202308650
摘要
The exposure of active edge sites of transition metal dichalcogenide (TMD) in TMD-based heterostructures is essential to enhance the catalytic activity toward electrochemical catalytic hydrogen evolution (HER). The construction of TMD-based edge-epitaxial heterostructures can maximally expose the active edge sites. However, owing to the 2D crystal structures, it remains a great challenge to vertically align layered TMDs on non-layered metal chalcogenides. Herein, the synthesis of Cu
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