光致发光
带隙
材料科学
荧光粉
钙钛矿(结构)
激发态
光电子学
发射光谱
宽禁带半导体
紫外线
氧化物
分析化学(期刊)
谱线
原子物理学
化学
结晶学
物理
冶金
色谱法
天文
作者
Yasushi Sato,Jin Odahara,Rie Yanamoto,Suzuka Noda,Takuya Hasegawa,Shu Yin,Junjun Jia,Masato Kakihana
标识
DOI:10.1021/acs.chemmater.3c02119
摘要
In this paper, we propose a new concept for the material design for near-ultraviolet (UV)-excited narrow-band phosphors with f–f emissions by bandgap engineering. The perovskite oxide–oxynitride solid solutions, namely, CaTa1–xZrxO2+xN1–x, were used as host materials to demonstrate our design principle. Photoluminescence (PL) excitation and emission control were systematically performed on Pr3+-activated CaTa1–xZrxO2+xN1–x, where x is in the range of 0.0–1.0. Tuning the PL excitation wavelength was archived over a large wavelength range by tailoring the bandgap of CaTa1–xZrxO2+xN1–x with different Ta/Zr and N/O ratios. Notably, an intense red emission from Pr3+ was observed at 614 nm under the near-UV irradiation of 375 nm when the bandgap of the host material CaTa1–xZrxO2+xN1–x (x = 0.75) was approximately 3.0 eV. Such a red emission peak was assigned to the electron transition between the 1D2 and 3H4 levels of the Pr3+ ions. In contrast, when the bandgap was above 3.0 eV, the PL emission spectra were systematically varied with the bandgap of the host materials. Some emission peaks from the electron transition between 3P0 and 3H4, 3H5, and 3F2 levels were observed in the samples with x = 0.90 and x = 0.95. Our results indicate that the PL properties of the phosphors with f–f emission are systematically controlled based on the bandgap engineering for the host materials.
科研通智能强力驱动
Strongly Powered by AbleSci AI