High‐Leakage‐Resistance and Low‐Turn‐On‐Voltage Upconversion Devices Based on Perovskite Quantum Dots (Adv. Funct. Mater. 1/2024)

Solution-Processed Upconversion Devices In article number 2309589, Zong-Liang Tseng, Shun-Wei Liu, and co-workers demonstrate an effective strategy for improving the leakage resistance and turn-on voltage of solution-processed upconversion devices. Emissive perovskite quantum dots and a synergistic hole-transporting layer ensure the quality of quantum-dot films and provide a new way for designing high-performance solutionprocessed upconversion devices.