Improve characteristics of GaN-based green mini-LEDs with double dielectric sidewall passivation

Abstract The technique of double dielectric sidewall passivation could improve the electroluminescence characteristics of green mini-LED, including the leakage current, electroluminescence intensity and external quantum efficiency (EQE). According to the analysis of EQE with ABC + f (n) model, both the increment of size and the sidewall passivation could reduce the fraction of SRH recombination. Then, the results of time-resolved photoluminescence measurement indicated that the carrier lifetime of mini-LEDs with higher surface-volume ratio and sidewall passivation would be reduced. Moreover, the communication performances such as modulation bandwidth and frequency response of green mini-LEDs could also be improved by adopting double dielectric sidewall passivation, and the smaller sized green mini-LEDs could achieve higher modulation bandwidth and frequency response.