拓扑绝缘体
材料科学
异质结
居里温度
凝聚态物理
分子束外延
外延
自旋电子学
范德瓦尔斯力
磁铁
拓扑(电路)
铁磁性
纳米技术
光电子学
物理
量子力学
组合数学
图层(电子)
分子
数学
作者
Wenyi Zhou,Alexander J.R. Bishop,Xiyue S. Zhang,Katherine Robinson,Igor Lyalin,Ziling Li,Ryan Bailey-Crandell,Thow Min Jerald Cham,Shuyu Cheng,Yunqiu Kelly Luo,Daniel C. Ralph,David A. Muller,Roland Kawakami
标识
DOI:10.1103/physrevmaterials.7.104004
摘要
Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize their magnetic ordering to higher temperatures. In this work, we utilize molecular beam epitaxy to systematically tune the Curie temperature (T<sub>C</sub>) in thin film Fe<sub>3</sub>GeTe<sub>2</sub>/Bi<sub>2</sub>Te<sub>3</sub> from bulklike values (~220 K) to above room temperature by increasing the growth temperature from 300°C to 375°C. For samples grown at 375°C, cross-sectional scanning transmission electron microscopy (STEM) reveals the spontaneous formation of different Fe<sub>m</sub>Ge<sub>n</sub>Te<sub>2</sub> compositions (e.g., Fe<sub>5</sub>Ge<sub>2</sub>Te<sub>2</sub> and Fe<sub>7</sub>Ge<sub>6</sub>Te<sub>2</sub>) as well as intercalation in the vdW gaps, which are possible origins of the enhanced Curie temperature. Furthermore, this observation paves the way for developing various Fe<sub>m</sub>Ge<sub>n</sub>Te<sub>2</sub>/TI heterostructures with novel properties.
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