串联
材料科学
太阳能电池
硅太阳电池
光伏系统
光电子学
电容
硅
图层(电子)
纳米技术
复合材料
电气工程
化学
工程类
电极
物理化学
作者
Devsmita Roy,Rajeshwari Garain,Arindam Basak,Satyaranjan Behera,Ranjeeta Patel,Udai P. Singh
出处
期刊:Lecture notes in electrical engineering
日期:2023-01-01
卷期号:: 63-75
标识
DOI:10.1007/978-981-19-6605-7_5
摘要
In this paper, photovoltaic characteristics of tandem or multi-junction solar cell structure based on Cu2SnS3 (CTS) were analyzed. Solar Cell Capacitance Simulator software (SCAPS-1D) was used to examine an optimistic material for solar cell applications. To investigate the efficiency and stability of the tandem Cu2SnS3 (CTS) solar cell (p-CTS/p-Si/n-Si) structure, silicon (Si) was employed as the multi-junction. The effect of changing simulation parameters including carrier concentration, layer thickness, and ambient operating temperature on this redesigned structure, which consists of heavily doped p-CTS and Si layers, was examined. Enhancing the layer thickness of p-CTS, n-Si, p-Si, and the carrier concentration of p-CTS resulted in increased photovoltaic effects.
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