HfO2:Gd-based ferroelectric memristor as bio-synapse emulators

In this work, a memristor device with Pd/HfO2:Gd/La0.67Sr0.33MnO3/SrTiO3/Si was prepared, and its synaptic behavior was investigated. The memristor shows excellent performance in I–V loops and ferroelectric properties. Through polarization, the conductance modulation of the memristor is achieved by the reversal of the ferroelectric domain. In addition, we simulate biological synapses and synaptic plasticities such as spike-timing-dependent plasticity, paired-pulse facilitation, and an excitatory postsynaptic current. These results lay the foundation for the development of synaptic functions in Hf-based ferroelectric thin films and will promote the development of synaptic applications for neuromorphic computing chips.