800-V Irradiation-Hardened Device Technology on GaN-on-SiC Power Integration Platform

This work reports the first demonstration of 800V irradiation-hardened (IH) GaN device technology on the GaN-on-SiC power integration platform. IH p-GaN HEMT, MIS HEMT and rectifier are achieved simultaneously, showing single-event burnout voltages (VSEBS) above 800 V and SEB degradation rates of only 5~10%. These results are the best reported among Si/SiC/GaN devices to date, benefiting from the accumulation and dissipation passage designs for irradiation-induced holes. Meanwhile, IH-GaN devices exhibit nanosecond dynamic switching, successfully achieving a high-power conversion efficiency of 96% under 500W/300K and irradiation conditions. In the monolithically integrated half-bridge circuit tests, both high- and low-side IH devices are immune to crosstalk even under 1000V substrate bias and irradiation conditions, revealing 600V/1MHz high-frequency switching, thanks to shallow trench isolation and GaN-on-SiC power integration technology. The irradiation characteristics of these IH-GaN integrated circuits are reported for the first time. These results show the enormous potential of IH-GaN devices and integrated circuits for irradiation applications.