Accurate model and switching characteristics of SIC MOSFET power modules with Kelvin source package

Kelvin source packaged power modules are widely used because of their faster switching speed and lower switching loss, nevertheless, the influence of their electrical parameters is still unclear. In order to analyse the switching characteristics of SiC MOSFET power modules with Kelvin source package, firstly, an accurate analysis model considering the parasitic parameters is proposed in this article, which deduces the simplified analytical expressions of the voltage and current overshoot of the power module with the Kelvin source package. Besides, an equivalent RLC circuit for the on-off oscillation stage of the power modules with Kelvin source package is proposed. Based on this equivalent circuit, the relationship between oscillation and electrical parameters is obtained. To validate the accuracy of the proposed model, the double pulse test experimental prototype is established, and the parasitic parameters of PCB and SiC MOSFET power module package of are extracted by Ansys Q3D Extractor. The experimental and the simulation results consistent well with the proposed analysis module, which demonstrate the proposed analysis module can effectively predicated the switching procedure of the power module with the Kelvin source package.