中间层
计算机科学
工艺工程
材料科学
工程类
纳米技术
蚀刻(微加工)
图层(电子)
作者
Shin-Puu Jeng,Monsen Liu
出处
期刊:
日期:2022-12-03
卷期号:: 3.2.1-3.2.4
被引量:8
标识
DOI:10.1109/iedm45625.2022.10019517
摘要
Interposer technology is successfully adopted for heterogeneous and chiplet integration because of its advantages in electrical performance, warpage control, yield and reliability. Organic interposer (CoWoS-R) technology is one of the most promising new integration interposer platforms, providing low RC interconnect with good signal isolation and design scalability. New integrated de-cap capacitors suppress the power domain noise and enhance the HBM3 signal integrity at high data rate.
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