Performance and Reliability of Technology Qualified 34 Mb Split-Gate eFLASH Macro in 28 nm HKMG

We discuss the reliability results of 1.8V 34 Mb embedded Flash array based on SuperFlash^® ESF3 memory cell integrated into Low-Power 28 nm CMOS high-k metal gate (HKMG) technology with gate-first architecture. The unique integration scheme with ten mask adders for eFlash featuring HKMG select transistor results in excellent baseline logic device matching and better performance in terms of erase cycling-induced degradation as compared to prior technology nodes with poly-SiON select transistor. The qualification results prove that the HKMG select transistor in split-gate Flash cell does not affect Flash memory reliability. The technology is ready for production of IoT, smart card and industrial MCU applications operating from −40°C to 125°C. Application extension feasibility for automotive and in-memory computing is discussed.