Experimental Study on 650-V Trench-FS CS-SJ-IGBT Based on 45-μm Multi-Epi SJ-Pillar

A Multi-Epi-based 650-V/30-A trench field-stop carrier-storage superjunction-insulated gate bipolar transistor (CS-SJBT) is designed and experimentally presented in this work, whose cell structure, main process flow, and measured static/dynamic parameters are demonstrated. Advanced commercial trench/micropattern-trench (MPT) field-stop N-drift IGBT (NDBT) are comparatively measured to evaluate the performance improvement of SJ-pillar. Measured BV/ $\textit{V} _{\text {th}}$ / $\textit{V} _{\text {on}}$ / $\textit{J} _{\text {C}}$ of CS-SJBT are similar to commercial NDBTs; meanwhile, $\textit{t} _{\text {d,on}}$ / $\textit{t} _{\text {r}}$ / $\textit{E} _{\text {on}}$ / $\textit{t}_{\text {d,off}}$ / $\textit{t} _{\text {f}}$ / $\textit{E} _{\text {off}}$ of CS-SJBT are reduced from Trench-NDBT and approximate to MPT-NDBT under the effect of SJ-pillar. Overall, FOM of trench-SJBT is 2.8 times as trench-NDBT and 1.7 times as MPT-NDBT, respectively, which demonstrates that 45- $\mu $ m SJ-pillar in 650-V CS-IGBT can obtain no weaker $\textit{V} _{\text {on}}$ – $\textit{E} _{\text {on}}$ / $\textit{E} _{\text {off}}$ – $\textit{t} _{\text {sc}}$ tradeoff by reducing $\textit{E} _{\text {on}}$ / $\textit{E} _{\text {off}}$ than 1.6- $\mu $ m MPT by reducing $\textit{V} _{\text {on}}$ .