Hold Voltage Behavior in NbOx Based Threshold Switches for Selector Technology and Neuromorphic Computing Applications

We study the insulator-metal transition characteristics of NbO x -based threshold switches to identify how the hold voltage (V hold ), which is a key knob for various applications, can be tuned towards low or high values. Since the hold behavior is rooted in threshold switching, we first investigate the electrical characteristics of the switches with respect to scaling of the NbO x film thickness and cell diameter. We then reveal that the hold properties are mainly related to the stability of the locally transformed metallic phase in the NbO x . Increasing the compliance current not only allows a geometrically thicker and denser phase to be formed, but also elevating the temperature makes the phase thermodynamically favorable, thereby lowering the V hold .