Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

Ga₂O₃ is the only ultra-wide bandgap semiconductor with melt-growth substrate technology similar to that of Si, heterostructure device technology similar to that of the III-Nitride family, and high growth rate (GR) epitaxial technologies such as MOCVD and HVPE to support the development of ultra-high-breakdown voltage devices competitive with SiC technology. We report a Ga2O3 transistor device based on a high-GR MOCVD technology (Agnitron Technology’s Agilis 100 reactor). We have demonstrated for the first time a β-Ga₂O₃ MOSFET grown by high-GR MOCVD resulting in significantly improved epilayer quality. The high GR demonstrated via this method paves the road for demonstration of high breakdown voltage devices on a thick Ga₂O₃ buffer layer.