Lateral crystallization of silicon films using Joule heating

We report lateral crystalline grain growth of silicon thin films by a combination of the crystallization by the electrical current induced Joule heating method with rapid substrate heating. A Cr strip was heated by electrical current induced joule heating. Due to heat diffusion from the Cr heater, a temperature gradient was formed in the lateral direction of the silicon films. Two-dimensional heat flow simulation and microphotographs suggests that lateral crystalline grain growth occurred at temperature gradient of about 1.3/spl times/10/sup 5/ K/cm.