Second-harmonic generation in silicon carbide polytypes
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作者
S. Niedermeier,H. Schillinger,R. Sauerbrey,B. Adolph,F. Bechstedt
出处
期刊：Applied Physics Letters [American Institute of Physics] 日期：1999-08-02卷期号：75 (5): 618-620被引量：45
标识
DOI：10.1063/1.124459
摘要
We report simultaneous measurements and ab initio calculations of the second-order nonlinear coefficients for SiC polytypes. Our measured values for χzzz (χzxx) are 18 (−4) pm/V for 4H SiC and 24 (−4) pm/V for 6H SiC. They are in good agreement with our theoretical results.
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