发光
激子
材料科学
变形(气象学)
阴极发光
GSM演进的增强数据速率
宽禁带半导体
堆积
硼
六方氮化硼
六方晶系
氮化硼
凝聚态物理
结晶学
光电子学
纳米技术
化学
复合材料
物理
有机化学
电信
计算机科学
石墨烯
作者
Kenji Watanabe,Takashi Taniguchi,Takashi Kuroda,H. Kanda
摘要
The authors observed a drastic change in exciton-related luminescence in deformed hexagonal boron nitride single crystals. High quality single crystals that showed a free exciton luminescence band at 215nm were used as a starting material. They were pinched between aluminum plates and pressed with the tips of the first two fingers. The pressed crystals dominantly showed band-edge luminescence at the 227 instead of the 215nm band. The authors attribute this 227nm band to bound exciton luminescence caused by the stacking disorder produced by the mechanical deformation.
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