离子注入
可控性
材料科学
半导体
兴奋剂
半导体器件制造
半导体器件
再现性
离子
杂质
光电子学
工程物理
纳米技术
工程类
化学
薄脆饼
数学
有机化学
图层(电子)
色谱法
应用数学
出处
期刊:IEEE Transactions on Parts, Hybrids, and Packaging
[Institute of Electrical and Electronics Engineers]
日期:1974-12-01
卷期号:10 (4): 234-239
被引量:2
标识
DOI:10.1109/tphp.1974.1134869
摘要
The introduction of impurity atoms into a surface by means of ion implantation is a well established technique in the semiconductor field. The main advantages of ion-implantation doping are its high controllability, uniformity, and reproducibility. Increasing applications, coupled with the development and availability of commercial equipment, has resulted in the use of the implantation technology in most major semiconductor processing facilities. Discussed in this review paper are: the ion-implantation process; standard ionimplantation equipment and operating parameters; and applications in device structures.
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