Suppression of high gain GaAs photoconductive semiconductor switch at high electric field
作者
Ming Xu,Wei Shi,Xiaoqing He,Yan Zhijing,Hong Liu
标识
DOI:10.1109/irmmw-thz.2015.7327660
摘要
In order to explore the efficient THz emitter with GaAs photoconductive semiconductor switch (PCSS), it's necessary to achieve the suppression of high gain mode in high electric field. The infrared activation and inhibition of high field domains is achieved and the good hold-off characteristics is obtained with 32 kV.