太阳能电池
材料科学
光伏系统
光电子学
硅
热的
晶体硅
量子点太阳电池
太阳能电池效率
聚合物太阳能电池
电气工程
工程类
物理
气象学
作者
Jingfeng Yang,Jared Goguen,R. N. Kleiman
标识
DOI:10.1109/led.2012.2217391
摘要
A silicon (Si) solar cell structure with an integrated Si tunnel junction (TJ) is proposed for multijunction (MJ) solar cell applications. The TJ is fabricated on top of an ordinary Si solar cell via the proximity rapid thermal diffusion process. The fabricated solar cells with integrated TJs show nondegraded photovoltaic characteristics. The electrical performance of the TJs allows for normal operation of Si-based MJ solar cells under at least 250-sun illumination and can be improved to achieve compatibility for higher illumination levels. The structure reported in this letter serves as a promising candidate for use as a bottom cell with an integrated TJ for low-cost and high-efficiency MJ solar cells.
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