Composition-dependent dielectric and energy-storage properties of (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric thick films

1.8 -μm-(Pb0.97La0.02)(Zr0.95−xSnxTi0.05)O3 antiferroelectric thick films with orthorhombic (x = 0.05 and 0.25) and tetragonal (x = 0.40) structure were deposited on platinum-buffered silicon substrates by using a chemical solution way. All the films had a uniform microstructure with pure perovskite phase. With increasing x value, dielectric constant and critical electric breakdown field of the thick films were gradually increased, while their saturated polarizations were decreased. As a result, their maximum recoverable energy-storage density was increased for the thick films with larger x values. A huge recoverable energy-storage density of 56 J/cm3 was obtained in antiferroelectric thick films with x = 0.40. Moreover, a good temperature-dependent stability of the energy storage was obtained in the all films from 20 to 120 °C.