REDISTRIBUTION OF TEMPERATURE IN THE STRUCTURE IS UNDER THE INFLUENCE OF X-RAY
作者
Грошев,A. Groshev,Чубур,K. Chubur,Яньков,A. Yankov,Зольников,Vladimir Zolnikov,Савченко,А. А. Савченко
出处
期刊：Modeling of systems and processes日期：2016-05-11卷期号：8 (4): 7-10
标识
DOI：10.12737/19484
摘要
A mathematical model of redistribution of temperature in the IS, depending on housing construction, when exposed to X-rays. The result of the comparative analysis of heat redistribution in the typical structure of the silicon IS and bipolar transistor produced on a computer.
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(2025-6-4)
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