Sublimation-doping with super bases for high-performance solution-processed heterojunction oxide thin film transistors

Various amidine base with different p K a values are deposited via sublimation, resulting in not only an exceptionally high electron mobility of 37.8 cm 2 V −1 s −1 on average (46.6 cm 2 V −1 s −1 maximum) but also a high level of bias-stress stability.