记忆电阻器
材料科学
无定形固体
锡
调制(音乐)
热传导
线性
光电子学
电阻随机存取存储器
电极
电子工程
化学
物理
复合材料
结晶学
物理化学
声学
工程类
冶金
作者
Yeon Pyo,Jong Un Woo,Hyun Tae Hwang,Sahn Nahm,Jichai Jeong
出处
期刊:Nanomaterials
[MDPI AG]
日期:2021-10-12
卷期号:11 (10): 2684-2684
被引量:8
摘要
An amorphous Pr0.7Ca0.3MnO3 (PCMO) film was grown on a TiN/SiO2/Si (TiN-Si) substrate at 300 °C and at an oxygen pressure (OP) of 100 mTorr. This PCMO memristor showed typical bipolar switching characteristics, which were attributed to the generation and disruption of oxygen vacancy (OV) filaments. Fabrication of the PCMO memristor at a high OP resulted in nonlinear conduction modulation with the application of equivalent pulses. However, the memristor fabricated at a low OP of 100 mTorr exhibited linear conduction modulation. The linearity of this memristor improved because the growth and disruption of the OV filaments were mostly determined by the redox reaction of OV owing to the presence of numerous OVs in this PCMO film. Furthermore, simulation using a convolutional neural network revealed that this PCMO memristor has enhanced classification performance owing to its linear conduction modulation. This memristor also exhibited several biological synaptic characteristics, indicating that an amorphous PCMO thin film fabricated at a low OP would be a suitable candidate for artificial synapses.
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