材料科学
分解水
光电子学
氧化物
半导体
绝缘体(电)
表面光电压
电容器
肖特基势垒
纳米技术
电压
二极管
化学
电气工程
生物化学
物理
光催化
量子力学
光谱学
冶金
工程类
催化作用
作者
Andrew G. Scheuermann,John Lawrence,Kyle W. Kemp,Tatsuro Ito,Adrian Walsh,Christopher E. D. Chidsey,Paul K. Hurley,Paul C. McIntyre
出处
期刊:Nature Materials
[Springer Nature]
日期:2015-10-19
卷期号:15 (1): 99-105
被引量:202
摘要
Metal oxide protection layers for photoanodes may enable the development of large-scale solar fuel and solar chemical synthesis, but the poor photovoltages often reported so far will severely limit their performance. Here we report a novel observation of photovoltage loss associated with a charge extraction barrier imposed by the protection layer, and, by eliminating it, achieve photovoltages as high as 630 mV, the maximum reported so far for water-splitting silicon photoanodes. The loss mechanism is systematically probed in metal–insulator–semiconductor Schottky junction cells compared to buried junction p+n cells, revealing the need to maintain a characteristic hole density at the semiconductor/insulator interface. A leaky-capacitor model related to the dielectric properties of the protective oxide explains this loss, achieving excellent agreement with the data. From these findings, we formulate design principles for simultaneous optimization of built-in field, interface quality, and hole extraction to maximize the photovoltage of oxide-protected water-splitting anodes. Although protecting photoanodes using metal oxides is attractive for solar fuel applications, the photoanodes typically suffer from poor photovoltage. Now, insulating oxide layers are shown to promote enhanced photovoltages and general design principles are suggested.
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