石墨烯
材料科学
拉曼光谱
脉冲激光沉积
薄膜
异质结
基质(水族馆)
硅
化学气相沉积
光致发光
光电子学
二硫化钼
氧化物
分析化学(期刊)
纳米技术
光学
化学
复合材料
冶金
海洋学
物理
色谱法
地质学
作者
P.S. Midhun,Anjala Jayaraj,Savitha Nalini,A.S. Asha,Rajeev Kumar K.,M. K. Jayaraj
摘要
Molybdenum disulpihde mono/few layers were deposited by pulsed laser deposition on graphene substrates thereby forming MoS2 - graphene van der Waal heterostructures. Initially, the optimization of the growth MoS2 layers were carried out on thermal oxide silicon (Si/SiO2) substrate by pulsed laser deposition technique. The difference between two Raman peaks A1g and E1/2g modes (▵ƒ) was used to determine the number of layers of the grown MoS2 thin films. The photoluminescence spectra with two excitonic peaks A and B confirmed the formation of mono/ few layered MoS2 thin films. Similar growth conditions were used to deposit MoS2 thin films on CVD grown graphene transferred on to thermally oxidized silicon substrate. The formation of MoS2 - graphene van der Waal heterostructures were confirmed using Raman analysis.
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