Enhanced Switching in an Argon Annealed RRAM by Ion Irradiation

The present study describes the impact of ion irradiation on the switching behaviour of zinc oxide formed on ITO substrates by RF sputtering. When annealed ZnO—ITO (Zinc Oxide—Indium Tin Oxide) structures are bombarded with Ag +8 with a fluence of 10 12 ions cm −2 , the resistance ratio was found to be the order 10 3 at 1 V. In pristine samples (annealed in argon) the resistance ratio was found to be 10 2 at 1 V. Variations in density defect generated by Swift Heavy Ion (SHI) irradiation gave birth to conducting filaments, which are the principal source of switching in ZnO, as opposed to changes in vacancies of oxygen at the interface.