Rare earth Nd-doping lead-free double perovskite Cs2AgBiBr6 films with improved resistive memory performance

Lead-free double perovskites have been an excellent candidate for resistive memories due to their mixed electronic-ionic properties, remarkable ambient stability and nontoxicity. However, the studies on resistive memories of rare-earth ion doping lead-free double perovskite are scarce to date. Here, we report the lead-free double perovskite Cs2AgBiBr6 films with tuning rare earth Nd3+ content by the vacuum sublimation and solution processing. The X-ray diffraction (XRD) pattern and scanning electron microscopy (SEM) confirm that Nd-doped Cs2AgBiBr6 films show high crystallinity and phase purity. We also systematically investigate the resistive memory properties of the resulted Cs2AgBiBr6 films doped by different content Nd3+. The resistive memory devices demonstrate a typical write-once-read-many-times (WORM) behavior with low on-set voltage and long retention time. Particularly, the ON/OFF ratio of Nd-doped Cs2AgBiBr6 film is 1000 times higher than that of the undoped Cs2AgBiBr6 film. This study exhibits that Nd-doped Cs2AgBiBr6 film provide a new material platform for lead-free perovskite-based application in future electronics and optoelectronics.