Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics

Abstract Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h‐BN research, it is explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface that is free of dangling bonds and charged impurities, and its high thermal conductivity. Recent discoveries of structural and optical properties of h‐BN have expanded potential applications into emerging electronics and photonics fields. h‐BN shows a very efficient deep‐ultraviolet band‐edge emission despite its indirect‐bandgap nature, as well as stable room‐temperature single‐photon emission over a wide wavelength range, showing a great potential for next‐generation photonics. In addition, h‐BN is extensively being adopted as active media for low‐energy electronics, including nonvolatile resistive switching memory, radio‐frequency devices, and low‐dielectric‐constant materials for next‐generation electronics.