Effects of phosphorus doping on the physical properties of axion insulator candidate EuIn2As2

We report an investigation on the single crystal growth, magnetic and transport properties of EuIn 2 (As 1− x P x ) 2 (0 ≤ x ≤ 1). The physical properties of axion insulator candidate EuIn 2 As 2 can be effectively tuned by P-doping. With increasing x , the c -axis lattice parameter decreases linearly, the magnetic transition temperature gradually increases and ferromagnetic interactions are enhanced. This is similar to the previously reported high pressure effect on EuIn 2 As 2 . For x = 0.40, a spin glass state at T g = 10 K emerges together with the observations of a butter-fly shaped magnetic hysteresis and slow magnetic behavior. Besides, magnetic transition has great influence on the charge carriers in this system and negative colossal magnetoresistance is observed for all P-doped samples. Our findings suggest that EuIn 2 (As 1− x P x ) 2 is a promising material playground for exploring novel topological states.