Vertically stacked Bi2Se3/MoTe2 heterostructure with large band offsets for nanoelectronics

We report a novel Au-assist exfoliation and non-destructive transfer method to fabricate the large-scale Bi 2 Se 3 thin nanosheet. Furthermore, a broken-gap tunneling phototransistor is designed by combing 2H-MoTe 2 and Bi 2 Se 3 .