Effective promotion of g–C3N4 photocatalytic performance via surface oxygen vacancy and coupling with bismuth-based semiconductors towards antibiotics degradation

材料科学 异质结 光催化 光降解 光电流 化学工程 空位缺陷 半导体 催化作用 降级(电信) 纳米技术 光电子学 化学 有机化学 结晶学 冶金 工程类 电信 计算机科学
作者
Farzad Hasanvandian,Mohsen Moradi,Sina Aghaebrahimi Samani,Babak Kakavandi,Shahrbanoo Rahman Setayesh,Mohammad Noorisepehr
出处
期刊:Chemosphere [Elsevier]
卷期号:287 (Pt 3): 132273-132273 被引量:112
标识
DOI:10.1016/j.chemosphere.2021.132273
摘要

In this research, the potential of bismuth chromate (BCO), a new bismuth-based semiconductor belongs to the family of Bi2XO6 (X = Mo, W, or Cr), was introduced by a novel 1D/2D structure consist of BCO nanobelts and N2-freezed ultra-wrinkled graphitic carbon nitride (N–CN) nanosheets. To enhance intimate contact between BCO and N–CN (BCO/N–CN composite), surface oxygen vacancy (VO) was created as an efficient electron transfer highway using a simple alkaline-treatment-assisted method. Various characterization techniques, including XRD, FT-IR, EPR, FE-SEM, TEM, BET, DRS, PL, EIS, and photocurrent transient analyses were conducted to elucidate the physicochemical aspects of catalysts. The synthesized catalysts were subjected to levofloxacin (LVFX) photodegradation and optimum conditions were found under LED irradiation. Under optimum conditions, about 92.5% of LVFX was catalytically degraded over VO-rich BCO/N–CN heterojunction after 120 min of reaction, which was 2.3 folds higher than that of VO-free composite. The obtained heterojunction maintained superior performance after five consecutive runs with no noticeable changes in the XRD and FT-IR patterns, demonstrating the high stability of synthesized nanocomposite. Thus, the proposed interfacial engineering in this study opens new insight for ameliorating the insufficient interfacial contact between components of heterojunctions. This study not only presents a new bismuth-based photocatalyst for antibiotic degradation but also sheds light on the charge migration behavior in favor of efficient Z-type heterojunction.
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