Advanced simulation of resistance switching in Si-rich silica RRAM devices

We use an experimentally-validated advanced three-dimensional physical simulator to investigate switching in SiOx resistive random-access memory (RRAM) devices. We show how the simulator is useful for exploring the little-known physics of these promising devices, and demonstrate that switching is an intrinsic property of the SiOx layer. The simulator is useful in providing efficient RRAM device and circuit designs, in terms of performance, variability and reliability.