Solution-processed carbon nanotubes based transistors with current density of 1.7 mA/μm and peak transconductance of 0.8 mS/μm

High performance field-effect transistors (FETs) are fabricated based on solution processed carbon nanotubes (CNTs) film through improving the density of CNT and optimizing contacts and gate geometry. Based on multiple-transferred CNT films with density of about 160 CNTs/pm, and via adopting stacked contacts and double gates (SCDG), the FETs with gate length of 120 nm exhibit maximum drive current density of 1.7 mA/pm and peak transconductance of 0.8 mS/pm (at Vds = -1 V), which create a new record for CNT FETs, and even exceed Si PMOS FETs at similar gate lengths for the first time. This device structure may potentially promotes the developments of CNT-based high-performance electronics.