Inorganic p-type semiconductors and carbon materials based hole transport materials for perovskite solar cells

材料科学 钙钛矿(结构) 半导体 纳米技术 碳纤维 光伏系统 商业化 能量转换效率 太阳能电池 工程物理 光电子学 化学工程 复合材料 电气工程 复合数 工程类 政治学 法学
作者
Yang Yang,Ngoc Duy Pham,Disheng Yao,Hua Zhu,Prasad K.D.V. Yarlagadda,Hongxia Wang
出处
期刊:Chinese Chemical Letters [Elsevier]
卷期号:29 (8): 1242-1250 被引量:37
标识
DOI:10.1016/j.cclet.2018.05.008
摘要

Organic-inorganic lead halide based perovskite solar cells (PSCs) have presented a promising prospective in photovoltaic field with current record power conversion efficiency of 22.7%, which is comparable to commercial crystalline silicon cells and even higher than traditional thin film solar cells of CIGS. However, the pressure to enhance device stability under operational condition has driven researches towards development of stable hole transport materials (HTMs) for PSCs. Compared to traditional expensive organic HTMs such as spiro-OMeTAD, there is no doubt that inorganic p-type semiconductors and carbon materials are attractive alternatives that not only possess better stability but also are much cheaper. This review summarized the most recent progress of inorganic hole-transporting materials and carbon materials that have been developed for PSCs. The most recent advancement of device performance using these HTMs was demonstrated. In addition, the research of using various types of carbon materials as additives in HTMs to enhance device performance and stability or as electrical contact in HTM-free PSC was also demonstrated. The effectiveness of each type of materials on mitigating ion migration and degradation of PSC induced by humidity, illumination light intensity and high temperature is discussed. This timely review sheds light on the approaches to tackle the stability issue of PSCs to push the technology towards commercialization through material engineering of HTM.
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