Zn diffusion-induced disorder in AlAs/GaAs superlattices

Zn diffusion into AlAs/GaAs superlattices has been studied experimentally using transmission electron microscopy and secondary ion mass spectroscopy. It has been found that microdefects are present near the Zn-diffusion front. Analysis of these defects has shown them to be interstitial dislocation loops. It is believed that the diffusion of Zn into AlAs/GaAs multiquantum wells and superlattices is similar to that of Zn into GaAs. This provides evidence for the interstitial mechanism for the enhancement of the interdiffusion of the GaAs/AlAs superlattices.