石墨烯
材料科学
氧化物
纳米技术
化学工程
化学物理
化学
冶金
工程类
作者
Cristina Gómez‐Navarro,R. Thomas Weitz,Alexander M. Bittner,Matteo Scolari,Alf Mews,Marko Burghard,Klaus Kern
出处
期刊:Nano Letters
[American Chemical Society]
日期:2007-10-18
卷期号:7 (11): 3499-3503
被引量:2355
摘要
Individual graphene oxide sheets subjected to chemical reduction were electrically characterized as a function of temperature and external electric fields. The fully reduced monolayers exhibited conductivities ranging between 0.05 and 2 S/cm and field effect mobilities of 2-200 cm2/Vs at room temperature. Temperature-dependent electrical measurements and Raman spectroscopic investigations suggest that charge transport occurs via variable range hopping between intact graphene islands with sizes on the order of several nanometers. Furthermore, the comparative study of multilayered sheets revealed that the conductivity of the undermost layer is reduced by a factor of more than 2 as a consequence of the interaction with the Si/SiO2 substrate.
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