ALD synthesis of SnSe layers and nanostructures

Growth of SnSe structures by the ALD method using Et4Sn and H2Se as precursors has been investigated. It was established that coverage occurs at a temperature above 250 °C and the morphology of the layer depends on the temperature. At 350 °C we have grown sphere-shaped particles 100–200 nm in diameter completely covering the substrate in one monolayer. For samples grown at 450 °C petal-shaped crystal islands were observed. The IR spectrum of SnSe grown at 350 °C shows a small shift (∼0.20 eV) of the room-temperature band gap energy.