Comparison of ALD of HfO2, SiO2, and HfSiOx Thin Films Using Various Metal/Silicon Alkylamide Precursors and O3

The atomic layer deposition (ALD) of HfO2, SiO2, HfxSi1-xO2 thin films were compared in process performance using various Hf/Si amide precursors and O3 as an oxidant. The novel Hf/Si precursor co-injection ALD process was evaluated to grow HfxSi1-xO2 films. The behavior of TEMAHf and TDMAHf were comparable in the HfO2 and HfxSi1-xO2 processes. Only 3DMASi yielded SiO2 films while both 4DMASi and TEMASi failed to deposit SiO2 under similar low temperature (< 400{degree sign}C) conditions. On the other hand, all three silicon precursors successfully deposited HfxSi1-xO2 over a wide range of temperature. This paper will explore films deposited on both single-wafer and batch ALD platforms, demonstrating that the films have equivalent physical and electrical behavior on both platforms.