成核
单层
纳米晶
材料科学
曲率
纳米线
化学物理
透射电子显微镜
GSM演进的增强数据速率
纳米技术
Crystal(编程语言)
六方晶系
表面能
凝聚态物理
分子物理学
结晶学
几何学
化学
物理
热力学
复合材料
电信
计算机科学
程序设计语言
数学
作者
Jean‐Christophe Harmand,G. Patriarche,Frank Glas,Federico Panciera,Ileana Florea,Jean‐Luc Maurice,Laurent Travers,Yannick Ollivier
标识
DOI:10.1103/physrevlett.121.166101
摘要
Crystal growth often proceeds by atomic step flow. When the surface area available for growth is limited, the nucleation and progression of the steps can be affected. This issue is particularly relevant to the formation of nanocrystals. We examine the case of Au-catalyzed GaAs nanowires, which we grow in a transmission electron microscope. Our in situ observations show that atomic layers nucleate at the periphery of the interface between the nanowire and the catalyst droplet. From this starting location, the atomic step flows within a restricted area of hexagonal shape. At specific partial coverages, the monolayer configuration changes abruptly. A simple model based on the geometry of the system and its edge energies explains these observations. In particular, we observe an inversion of the step curvature which reveals that the effective energy per unit length of monolayer edge is much lower at the interface periphery than inside the catalyst droplet.
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