Low Loss and EMI Noise Split-Gate Trench IGBT With Self-Powered Voltage Source

This letter presents simulations on a low loss and electromagnetic interference (EMI) noise split-gate (SG) trench IGBT with self-powered voltage source (SPSG-TIGBT). Combined with the self-powered circuit composed of the integrated polysilicon diode and external capacitor, the floating P-body (FP) in the dummy region anticipated to work as an integrated voltage source to charge the SG during turn-off process. This reduces the on-state voltage drop (Vceon), while maintaining the advantage of SG structure on the gate capacitance and charge. Numerical simulation results show that compared with the Con. TIGBT and Con. SG-TIGBT, the proposed device is expected to offer better trade-off between turn-off loss (Eoff) and Vceon. At the same Vceonof 1.18 V, the Eoffof the SPSG-TIGBT is 29.90% and 55.58% lower than that of the Con. TIGBT and Con. SG-TIGBT, respectively. Moreover, its high SG potential significantly reduces the turn-on loss (Eon) and enables a better trade-off between Eonand surge current (Isurge) of the device, thereby effectively mitigating EMI noise.