半导体器件制造
高斯过程
计算机科学
过程(计算)
高斯分布
算法
趋同(经济学)
数学优化
特征(语言学)
特征提取
钥匙(锁)
缩小
碳化硅
机械加工
高斯滤波器
过程变量
最优化问题
过程控制
工程类
人工智能
吞吐量
设定值
迭代法
迭代和增量开发
克里金
作者
Chin-Yi Lin,Tzu-Liang Tseng,Tsung-Han Tsai
标识
DOI:10.1109/tase.2025.3650620
摘要
Achieving optimal parameter settings in epitaxial silicon carbide (Epi SiC) manufacturing is challenging due to the need to simultaneously meet conflicting multi-objective requirements, such as precise thickness control and uniform doping. This paper presents an extended Digital Twin (DT) framework that incorporates the Multi-Objective Optimization with Deep-Feature Gaussian Process (MOODFG) algorithm, explicitly extending our prior DT-in-the-loop framework (MRBORI) in [26] from single-objective tuning to spec-driven multi-objective recipe optimization. The framework enables the effective optimization of high-dimensional and interdependent process parameters, overcoming limitations of traditional methods. The key innovation of the MOODFG algorithm lies in its integration of deep feature extraction and Gaussian Process Regression, which allows dynamic refinement of feature representations and surrogate models through iterative learning. Unlike MRBORI [26] (one objective per run), MOODFG minimizes a weighted distance to a user-specified target vector (e.g., thickness and doping) and provides an uncertainty-aware target-attainment certificate with a practical stopping rule for deployment. This approach ensures robust convergence to optimal parameter values while efficiently balancing multiple objectives. Experimental validation using real-world Epi SiC manufacturing data demonstrates significant improvements in yield, parameter stability, and process adaptability, highlighting the framework’s transformative potential for semiconductor manufacturing.
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