InGaAsSb photovoltaic cells with enhanced open-circuit voltage

Various Zn diffusion profiles in InGaAsSb photovoltaic cells with diffused emitters were experimentally studied. It was determined that strong built-in electric fields near the surface lead to a reduction of the saturation value of the injection (J01) component of the dark current, and hence to the increase of the open-circuit voltage (Voc). A value of J01 as low as 4.2×10−6 A/cm2 and a value of Voc as high as 344 mV at 3 A/cm2 were measured.