神经形态工程学
电阻随机存取存储器
计算机科学
图层(电子)
计算机硬件
人工智能
电气工程
人工神经网络
材料科学
工程类
纳米技术
电压
作者
Wenxuan Sun,Yi Li,Woyu Zhang,Xu Zheng,Danian Dong,Jie Yu,Jinru Lai,Shaoyang Fan,Hongzhou Wang,Xiaoxin Xu,Ming Liu
标识
DOI:10.1109/iedm45741.2023.10413870
摘要
For the first time, we demonstrated a multifunction three-dimensional (3D) vertical random-access memory (RRAM) array (MF-ЗDRRAM) where different layers exhibit nonvolatile properties and volatile characteristics respectively, to implement multimodal neuromorphic computing. The RRAM cells in the 1 st layer (WL: TiN) and the 2 nd layer (WL: Ru) have different dynamic characteristics, which are used to construct multi-scale reservoirs (M-RC). The RRAM in 3 rd layer (WL: W) exhibits analog switching behavior, applying for convolutional neural network (CNN) and full connection (FC) layer. A multimodal neuromorphic computing system with the network of M-RC+CNN is implemented by the MF-3DRRAM. The multifunction of the fabricated MF-3DRRAM chip is validated through the multimodal video recognition task, exhibiting high accuracy (98%), high area efficiency (6 TOPS/mm2) and low energy consumption (1.4pJ/operation). This proposed MF-3DRRAM is of great significance for miniaturized, low-power hardware implementations for edge computing.
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