材料科学
光电探测器
光电子学
结晶度
紫外线
五氧化二钽
扫描电子显微镜
纳米颗粒
光学
纳米技术
电介质
复合材料
物理
作者
Sihyeok Kim,Faisal Nawaz,Cheol Choi,Il Jeon,Keekeun Lee
标识
DOI:10.1002/admt.202301486
摘要
Abstract In recent times, significant progress is made in the development of solar‐blind deep‐ultraviolet (DUV) photodetectors (200–280 nm) due to their potential applications for military and civil purposes. In this study, the development of a novel solar‐blind DUV photodetector based on tantalum pentoxide (Ta 2 O 5 ) nanoparticles (NPs) utilizing Surface Acoustic Wave (SAW) sensor integrated with Interface electronics is reported for the first time. The 3‐D Ta 2 O 5 NPs surface morphology, crystallinity, and defect state level is discussed using various analytical techniques, including scanning electron microscope (SEM), X‐ray diffraction (XRD), and spectrophotometer. The developed 3‐D Ta 2 O 5 NPs based photodetector exhibits high sensitivity to 254 nm DUV irradiation (5 µW cm −2 ), demonstrating excellent photoresponse characteristics. The performance parameters including highest sensitivity, fast response/recovery time are measured as 1621.1 ppm (mW cm −2 ) −1 , 3.7s/19.8s, respectively. Subsequent analysis demonstrates the stability and repeatability of the photodetector, enabling its potential to real time corona discharge detection. With its inherent advantages, the current DUV photodetector utilizing Ta 2 O 5 NPs exhibits great potential for future applications in DUV optoelectronics.
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