Impact of Super-long-throw PVD on TSV Metallization and Die-to-Wafer 3D Integration Based on Via-last

The increasing demands for high-quality and high-aspect-ratio Through-Silicon Vias (TSVs) in three-dimensional integrated circuits (3D-IC) have made Si process technologies a significant challenge. Long-throw ionized Physical Vapor Deposition (iPVD) is widely used for barrier/seed layer deposition prior to Cu filling by electroplating for TSV. However, a micro-scale shadowing effect in deep Si holes with high aspect ratios results in failed filling. Bosch etching process can form the high-aspect-ratio deep Si holes but it leaves nuisance scallop features that further increase another submicron-scale shadowing effect. This study aims to explore the impact of super long-throw iPVD with low-frequency RF substrate bias to form high-aspect-ratio TSVs and compares the Cu coverages with a standard magnetron sputtering of non-ionized PVD for 3D-IC rapid prototyping.